The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs
نویسنده
چکیده
The possibility to perform charge-pumping measurements on power VDMOS transistors is investigated. By analyzing the spatial distributions of the charge-pumping threshold and flat-band voltages it is concluded that the charge-pumping measurements can be carried out in the subthreshold region of the device. This conclusion is confirmed by twodimensional transient numerical modeling of the charge-pumping effect and supported by experiments. The method for a separate extraction of interface state and fixed charge densities generated by irradiation in the oxide of VDMOSFETs is proposed.
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